Negative-chirp electroabsorption modulator using low-wavelength detuning

Author

Yamada, K. ; Nakamura, K. ; Matsui, Y. ; Kunii, T. ; Ogawa, Y.

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

7

Issue

10

fYear

1995

Firstpage

1157

Lastpage

1158

Abstract

The negative chirp of an electroabsorption modulator having an /spl alpha/-parameter value of 0 to -0.5, at an input light wavelength of 1.55-1.56 μm, has been developed by optimizing the bandgap energy of an InGaAsP bulk absorption layer. We have demonstrated successful transmission with 10 Gb/s NRZ modulation over a 100-km span of standard fiber without resort to dispersion compensation.

Keywords

III-V semiconductors; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical fibre communication; optical fibre dispersion; /spl alpha/-parameter value; 1.55 to 1.56 mum; 10 Gbit/s; 100 km; InGaAsP; InGaAsP bulk absorption layer; NRZ modulation; bandgap energy optimization; dispersion penalty characteristics; fiber transmission; input light wavelength; low-wavelength detuning; negative-chirp electroabsorption modulator; optical intensity modulator; Absorption; Bandwidth; Chirp modulation; Degradation; Optical attenuators; Optical buffering; Optical interferometry; Optical modulation; Photonic band gap; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466575

Filename

466575