DocumentCode
977036
Title
Combined dry and wet etching techniques to form planar (011) facets in GaInAsP/InP double heterostructures
Author
Coldren, Larry A. ; Furuya, Keiichi ; Miller, B.I. ; Rentschler, J.A.
Author_Institution
Bell Laboratories, Holmdel, USA
Volume
18
Issue
5
fYear
1982
Firstpage
235
Lastpage
237
Abstract
Using angled reactive ion etching (RIE) and wet chemical etching (WCE), planar (011) facets have been exposed on (100) GaInAsP/InP double heterostructures for the first time. Positively sloped wall profiles observed previously for this orientation are eliminated by an initial RIE that cuts through the stop-etching (111)A plane. These (011) mirror facets are preferred over (011) for most state-of-the-art low-threshold lasers.
Keywords
III-V semiconductors; etching; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP/InP double heterostructures; III-V semiconductors; angled reactive ion etching; dry etching; integrated optics; lasers; planar (011) facets; sloped wall profiles; wet etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820160
Filename
4246338
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