Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm

Electroabsorption properties of (In/sub 0.53/Ga/sub 0.47/As)/sub 0.7/ (In/sub 0.52/Al/sub 0.48/As)/sub 0.3/-In/sub 0.52/Al/sub 0.48/As quantum wells were investigated experimentally and analytically in order to form a semi-empirical model for 1.3 μm optical modulator applications. The observed exciton energy shifts and changes in electron-hole wave function overlap integrals are in agreement with calculation for the quantum confined Stark effect. Empirically, we found that the room-temperature exciton absorption peak can be described by a Gaussian peak, and that the residual absorption should be characterized by an exponential tail. In order to provide realistic linewidth broadening parameters, empirical expressions are summarized here for this material.