Title :
Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm
Author :
Cheng, A.-N. ; Wieder, H.H. ; Chang, W.S.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Electroabsorption properties of (In/sub 0.53/Ga/sub 0.47/As)/sub 0.7/ (In/sub 0.52/Al/sub 0.48/As)/sub 0.3/-In/sub 0.52/Al/sub 0.48/As quantum wells were investigated experimentally and analytically in order to form a semi-empirical model for 1.3 μm optical modulator applications. The observed exciton energy shifts and changes in electron-hole wave function overlap integrals are in agreement with calculation for the quantum confined Stark effect. Empirically, we found that the room-temperature exciton absorption peak can be described by a Gaussian peak, and that the residual absorption should be characterized by an exponential tail. In order to provide realistic linewidth broadening parameters, empirical expressions are summarized here for this material.
Keywords :
III-V semiconductors; aluminium compounds; electroabsorption; excitons; gallium arsenide; indium compounds; quantum confined Stark effect; semiconductor quantum wells; 1.3 micron; InGaAlAs-InAlAs; electroabsorption; electron-hole wave function overlap integrals; exciton energy shifts; lattice-matched quantum wells; linewidth broadening; optical modulator; quantum confined Stark effect; semi-empirical model; Absorption; Excitons; High speed optical techniques; Indium compounds; Indium phosphide; Optical modulation; Quantum well devices; Stark effect; Substrates; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
