Title :
A cascadable InGaAsP-InP optoelectronic smart pixel with low switching energy
Author :
Beyzavi, K. ; Kim, D.S. ; Chao, C.P. ; Burrows, P.E. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We demonstrate for the first time a 1.3-μm wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity surface-emitting lasers. The circuit functions as a cascadable optical switch with an on/off ratio of 6, and a maximum optical input/output differential gain of 6. At a bit rate of 100 Mb/s, a record low switching energy of 30 fJ was observed while maintaining circuit gain and cascadability. This switching energy is the lowest reported to date for an optoelectronic smart pixel.
Keywords :
III-V semiconductors; VLSI; bipolar integrated circuits; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser cavity resonators; optical switches; p-i-n photodiodes; semiconductor lasers; smart pixels; surface emitting lasers; switching circuits; 1.3 mum; 100 Mbit/s; 30 fJ; InGaAsP-InP; bit rate; cascadability; cascadable InGaAsP-InP optoelectronic smart pixel; cascadable optical switch; circuit gain; heterojunction bipolar transistors; low switching energy; maximum optical input/output differential gain; monolithically integrated p-i-n photodiodes; on/off ratio; optoelectronic InGaAsP-InP smart pixel switching circuit; record low switching energy; surface-mounted folded-cavity surface-emitting lasers; switching energy; Bit rate; Heterojunction bipolar transistors; Optical recording; Optical surface waves; Optical switches; PIN photodiodes; Smart pixels; Surface emitting lasers; Surface waves; Switching circuits;
Journal_Title :
Photonics Technology Letters, IEEE
