InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and fmax and low C/sub cb//I/sub c/ ratio

We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz f/sub /spl tau// and 459-GHz f_max, which is to our knowledge the highest f/sub /spl tau// reported for a mesa InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f_max for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a C/sub cb//I/sub c/ ratio of 0.28 ps/V at V/sub cb/=0.5 V. The V/sub BR,CEO/ is 5.6 V and the devices fail thermally only at >18 mW/μm², allowing dc bias from J/sub e/=4.8 mA/μm² at V/sub ce/=3.9 V to J/sub e/=12.5 mA/μm² at V/sub ce/=1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm.