Title :
280 Mbit/s single-mode fibre transmission with DFB laser diode emitting at 1.53 μm
Author :
Yamamoto, Seiichi ; Utaka, K. ; Akiba, Shigeyuki ; Sakai, Kenji ; Matsushima, Y. ; Sakaguchi, So ; Seki, N.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
By using a distributed feedback buried heterostructure InGaAsP/InP laser diode emitting at 1.53 μm, 21.7 km single-mode fibre transmission at 280 Mbit/s was successfully carried out without any noticeable degradation In a waveform and an error rate. This result indicates that a long-haul optical telecommunication system with a repeater span of over 70 km is possible in the fibre low-loss region of 1.5 μm to 1.6 μm wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fibres; semiconductor junction lasers; 1.53 μm; 280 Mbit/s single-mode fibre transmission; III-V semiconductor; distributed feedback buried heterostructure InGaAsP/InP laser diode; optical telecommunication system; repeater span;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820162
