Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; photodetectors; AlGaAs-GaAs; III-V lattice-matched heterojunctions; avalanche detector; bandgap; electron avalanche region; hole avalanche regions; impact ionisation; ionisation rates ratio; long-wavelength materials; semiconductors; ultra-low-noise avalanche photodiode;
