DocumentCode
977064
Title
Erratum: New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
Author
Capasso, Federico
Volume
18
Issue
5
fYear
1982
Firstpage
240
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; photodetectors; AlGaAs-GaAs; III-V lattice-matched heterojunctions; avalanche detector; bandgap; electron avalanche region; hole avalanche regions; impact ionisation; ionisation rates ratio; long-wavelength materials; semiconductors; ultra-low-noise avalanche photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820163
Filename
4246341
Link To Document