Title :
Monolithically integrated photonic switching device using an MSM PD, MESFETs, and a VCSEL
Author :
Matsuo, Shinji ; Nakahara, Tatsushi ; Kohama, Yoshitaka ; Ohiso, Yoshitaka ; Fukushima, Seiji ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
We have fabricated a photonic switching device that monolithically integrates a metal-semiconductor-metal photodetector, metal-semiconductor field-effect transistors, and a vertical-cavity surface-emitting laser. This device can perform both NOR- and OR-types of operation with thresholding input-output characteristics. The contrast ratio is more than 30 dB with optical gain. The device also shows a 3-dB bandwidth of 220 MHz and switching energy of 700 fJ at a 100-MHz frequency.<>
Keywords :
electro-optical switches; field effect integrated circuits; integrated optoelectronics; laser cavity resonators; metal-semiconductor-metal structures; optical logic; photodetectors; semiconductor lasers; surface emitting lasers; 100 MHz; 20 MHz; 700 fJ; MESFET; MSM PD; NOR logic; OR-type logic operation; VCSEL; contrast ratio; metal-semiconductor field-effect transistors; metal-semiconductor-metal photodetector; monolithically integrated photonic switching device; monolithically integrates; optical gain; switching energ; thresholding input-output characteristics; vertical-cavity surface-emitting laser; Buffer layers; Distributed Bragg reflectors; Etching; FETs; Gallium arsenide; MESFETs; Optical sensors; Photodetectors; Switching circuits; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
