Monolithically integrated photonic switching device using an MSM PD, MESFETs, and a VCSEL

Author

Matsuo, Shinji ; Nakahara, Tatsushi ; Kohama, Yoshitaka ; Ohiso, Yoshitaka ; Fukushima, Seiji ; Kurokawa, Takashi

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

7

Issue

10

fYear

1995

Firstpage

1165

Lastpage

1167

Abstract

We have fabricated a photonic switching device that monolithically integrates a metal-semiconductor-metal photodetector, metal-semiconductor field-effect transistors, and a vertical-cavity surface-emitting laser. This device can perform both NOR- and OR-types of operation with thresholding input-output characteristics. The contrast ratio is more than 30 dB with optical gain. The device also shows a 3-dB bandwidth of 220 MHz and switching energy of 700 fJ at a 100-MHz frequency.<>

Keywords

electro-optical switches; field effect integrated circuits; integrated optoelectronics; laser cavity resonators; metal-semiconductor-metal structures; optical logic; photodetectors; semiconductor lasers; surface emitting lasers; 100 MHz; 20 MHz; 700 fJ; MESFET; MSM PD; NOR logic; OR-type logic operation; VCSEL; contrast ratio; metal-semiconductor field-effect transistors; metal-semiconductor-metal photodetector; monolithically integrated photonic switching device; monolithically integrates; optical gain; switching energ; thresholding input-output characteristics; vertical-cavity surface-emitting laser; Buffer layers; Distributed Bragg reflectors; Etching; FETs; Gallium arsenide; MESFETs; Optical sensors; Photodetectors; Switching circuits; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466578

Filename

466578