K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

Author

Chiu, Hsien-Chin ; Yang, Shih-Cheng ; Lin, Cheng-Kuo ; Hwu, Ming-Jyh ; Chiou, H.K. ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

Volume

25

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

253

Lastpage

255

Abstract

A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z₀=70 Ω) for the biasing circuits, and a Z₀=50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tanδ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S₂₁ of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.

Keywords

III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect transistors; wideband amplifiers; 20 GHz; 70 ohm; BCB interlayer; InGaP-InGaAs; K-band monolithic amplifier; RF signal transmission; benzocyclobutene; biasing circuits; common-ground bridge process; coplanar waveguide; dielectric constant; doped-channel HFET; impedance; microstrip line; monolithic microwave integrated circuit; Coplanar waveguides; HEMTs; Impedance; Integrated circuit technology; K-band; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency integrated circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.827282

Filename

1295098