Title :
K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology
Author :
Chiu, Hsien-Chin ; Yang, Shih-Cheng ; Lin, Cheng-Kuo ; Hwu, Ming-Jyh ; Chiou, H.K. ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fDate :
5/1/2004 12:00:00 AM
Abstract :
A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z0=70 Ω) for the biasing circuits, and a Z0=50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tanδ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S21 of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.
Keywords :
III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect transistors; wideband amplifiers; 20 GHz; 70 ohm; BCB interlayer; InGaP-InGaAs; K-band monolithic amplifier; RF signal transmission; benzocyclobutene; biasing circuits; common-ground bridge process; coplanar waveguide; dielectric constant; doped-channel HFET; impedance; microstrip line; monolithic microwave integrated circuit; Coplanar waveguides; HEMTs; Impedance; Integrated circuit technology; K-band; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency integrated circuits;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.827282
