Optical mixing in epitaxial lift-off pseudomorphic HEMTs

Author

Bhattacharya, D. ; Bal, P.S. ; Fetterman, H.R. ; Streit, D.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

7

Issue

10

fYear

1995

Firstpage

1171

Lastpage

1173

Abstract

We present optical mixing in epitaxial lift-off (ELO) pseudomorphic HEMTs (PHEMTs) at difference frequencies in the microwave regime up to 22 GHz. The 3 μm gate length AlGaAs-InGaAs PHEMT´s mere lifted off their host GaAs substrates and subsequently attached to quartz slides. It was observed that the ELO devices consistently resulted in stronger signals (/spl sim/7 dB) than the non-ELO devices under frontside and backside illumination. This is attributed to improved optical coupling efficiency, a decrease in substrate leakage, and an illumination-induced back gating effect for the ELO films.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; indium compounds; integrated optoelectronics; multiwave mixing; optical couplers; optical losses; semiconductor growth; 22 GHz; 3 mum; AlGaAs-InGaAs; AlGaAs-InGaAs PHEMTs; ELO films; ELO pseudomorphic HEMTs; PHEMTs; backside illumination; difference frequencies; epitaxial lift-off pseudomorphic HEMTs; frontside illumination; host GaAs substrates; illumination-induced back gating effect; improved optical coupling efficiency; microwave regime; optical mixing; quartz slides; stronger signals; substrate leakage; Electrons; Frequency; Gallium arsenide; HEMTs; Microwave devices; Optical coupling; Optical mixing; PHEMTs; Photonics; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466580

Filename

466580