Title :
Hydrogen-induced DLTS signal in pd/n-Si Schottky diodes
Author :
Petty, Michael C.
Author_Institution :
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Abstract :
An investigation is reported into the electrical properties of palladium/silicon oxide/n-type silicon Schottky-barrier-type structures. On exposure to hydrogen a large increase in the DLTS signal is observed. This is thought to be associated with the production of electron trapping centres. Analysis reveals the presence of two traps, both located near the silicon surface.
Keywords :
Schottky-barrier diodes; deep level transient spectroscopy; electric sensing devices; elemental semiconductors; hydrogen; palladium; silicon; H2 induced DLTS signal; H2 sensors; Pd/n-Si Schottky diodes; deep level transient spectroscopy; electrical properties; production of electron trapping centres; solid state gas sensors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820214
