• DocumentCode
    977135
  • Title

    Electron transport phenomena in plasma devices with E/spl times/B drift

  • Author

    Keidar, Michael ; Beilis, Isak I.

  • Author_Institution
    Dept. of Aerosp. Eng., Michigan Univ., Ann Arbor, MI
  • Volume
    34
  • Issue
    3
  • fYear
    2006
  • fDate
    6/1/2006 12:00:00 AM
  • Firstpage
    804
  • Lastpage
    814
  • Abstract
    A review of plasma devices involving electron drift in crossed electric and magnetic fields (EtimesB drift) and electron transport phenomena is presented. There are two important peculiarities of EtimesB system: possibility to maintain a large electric field in a quasi-neutral plasma which allows transport of relatively large intensity beam of charged particle and an efficient impact ionization due to closed electron drift. Several technological applications of devices based on electron drift in EtimesB field are under development, including plasma immersion ion implantation, energetic deposition of materials, magnetron sputtering, and plasma propulsion. Despite very different applications, the underlining physics of operation of these devices is very similar. One of the important physical phenomena is the electron transport across a magnetic field. Experimental and theoretical study reveals that electrons undergo anomalous transport and several possible mechanisms are proposed and studied previously. Anomalous electron transport mechanisms such as Bohm diffusion and near-wall conductivity are reviewed and assessed for two EtimesB devices, namely magnetron and Hall thruster. A modified model of the near-wall conductivity that takes into account various sheath effects is developed. It is shown that an axial electric field in the sheath can significantly affect the near wall conductivity
  • Keywords
    ionisation; plasma accelerators; plasma magnetohydrodynamics; plasma sheaths; plasma transport processes; plasma-beam interactions; plasma-wall interactions; Bohm diffusion; EtimesB drift; Hall thruster; axial electric field; charged particle beam; electron transport; energetic materials deposition; impact ionization; magnetron; magnetron sputtering; near-wall conductivity; plasma devices; plasma immersion ion implantation; plasma propulsion; quasineutral plasma; sheath effects; Conductivity; Electrons; Magnetic devices; Magnetic fields; Magnetic materials; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma transport processes; Anomalous electron transport; Hall thruster; magnetron; near-wall conductivity;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2006.874852
  • Filename
    1643307