DocumentCode
977135
Title
Electron transport phenomena in plasma devices with E/spl times/B drift
Author
Keidar, Michael ; Beilis, Isak I.
Author_Institution
Dept. of Aerosp. Eng., Michigan Univ., Ann Arbor, MI
Volume
34
Issue
3
fYear
2006
fDate
6/1/2006 12:00:00 AM
Firstpage
804
Lastpage
814
Abstract
A review of plasma devices involving electron drift in crossed electric and magnetic fields (EtimesB drift) and electron transport phenomena is presented. There are two important peculiarities of EtimesB system: possibility to maintain a large electric field in a quasi-neutral plasma which allows transport of relatively large intensity beam of charged particle and an efficient impact ionization due to closed electron drift. Several technological applications of devices based on electron drift in EtimesB field are under development, including plasma immersion ion implantation, energetic deposition of materials, magnetron sputtering, and plasma propulsion. Despite very different applications, the underlining physics of operation of these devices is very similar. One of the important physical phenomena is the electron transport across a magnetic field. Experimental and theoretical study reveals that electrons undergo anomalous transport and several possible mechanisms are proposed and studied previously. Anomalous electron transport mechanisms such as Bohm diffusion and near-wall conductivity are reviewed and assessed for two EtimesB devices, namely magnetron and Hall thruster. A modified model of the near-wall conductivity that takes into account various sheath effects is developed. It is shown that an axial electric field in the sheath can significantly affect the near wall conductivity
Keywords
ionisation; plasma accelerators; plasma magnetohydrodynamics; plasma sheaths; plasma transport processes; plasma-beam interactions; plasma-wall interactions; Bohm diffusion; EtimesB drift; Hall thruster; axial electric field; charged particle beam; electron transport; energetic materials deposition; impact ionization; magnetron; magnetron sputtering; near-wall conductivity; plasma devices; plasma immersion ion implantation; plasma propulsion; quasineutral plasma; sheath effects; Conductivity; Electrons; Magnetic devices; Magnetic fields; Magnetic materials; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma transport processes; Anomalous electron transport; Hall thruster; magnetron; near-wall conductivity;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2006.874852
Filename
1643307
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