Title :
Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTs
Author :
Suemitsu, T. ; Enoki, T. ; Ishii, Y.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
6/6/1996 12:00:00 AM
Abstract :
The mechanism of kink in InP based InAlAs/InGaAs HEMTs is studied using HEMTs with a body contact (BC) electrode consisting of a buried p layer and a p-type contact. Kink modification was directly observed by varying BC bias, which shows kink is an anomalous suppression of drain current at low drain bias, not a parasitic current at high bias. Based on this result, the origin of kink is discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; BC bias; HEMT; InAlAs-InGaAs; InP; body contact electrode; buried p layer; drain current; kink; p-type contact;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960726
