DocumentCode
977185
Title
Silicon carbide on insulator formation using the Smart Cut process
Author
Di Cioccio, L. ; Le Tiec, Y. ; Letertre, F. ; Jaussaud, C. ; Bruel, M.
Author_Institution
Departement de Microtechnol., LETI-CEA, Grenoble, France
Volume
32
Issue
12
fYear
1996
fDate
6/6/1996 12:00:00 AM
Firstpage
1144
Lastpage
1145
Abstract
The Smart Cut process has been applied for the first time to SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycrystalline SiC and on silicon substrates
Keywords
annealing; integrated circuit technology; ion implantation; polishing; silicon compounds; wafer bonding; Si; Si substrate; SiC; SiC on insulator formation; SiCOI structures; Smart Cut process; polycrystalline SiC substrate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960717
Filename
502907
Link To Document