Title :
Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications
Author :
Chakrabarti, P. ; Krier, A. ; Huang, X.L. ; Fenge, P.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fDate :
5/1/2004 12:00:00 AM
Abstract :
In this letter, we report an InAsSb p+-n junction photodetector grown on InAs substrate by liquid phase epitaxy. Electrical and optical characterizations of the device have been carried out at room temperature for operation of the device in the mid-infrared region. The study revealed that the dark current of the photodetector under reverse bias is dominated by a trap-assisted tunnelling current component, which degrades the detectivity of the device. Further, by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias.
Keywords :
III-V semiconductors; indium compounds; infrared detectors; liquid phase epitaxial growth; photodetectors; semiconductor device manufacture; semiconductor epitaxial layers; 293 to 298 K; InAs-InAsSb; InAs0.96Sb0.04; MIR photodetector; dark current; device detectivity; electrical characterization; liquid phase epitaxy; mid-infrared region; optical characterization; p-n junction photodetector; reverse bias; room temperature; substrate; trap-assisted tunneling; trap-assisted tunnelling current; zero-bias resistance area product; Dark current; Detectors; Fabrication; Optical sensors; Optical superlattices; Photodetectors; Radiative recombination; Substrates; Temperature; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826979
