Title :
New unipolar switching power device figures of merit
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., State Univ., Blacksburg, VA, USA
fDate :
5/1/2004 12:00:00 AM
Abstract :
Several new unipolar switching power device figures of merit are proposed based on proper consideration of power device conduction and switching losses. These figures of merit can be used for device and material comparison. The relative advantages of different semiconductor materials are then compared. Using the new figures of merit, the predicted advantages of power devices based on wide-bandgap materials are less than those predicted by other published figures of merits.
Keywords :
junction gate field effect transistors; power MESFET; power MOSFET; power semiconductor switches; semiconductor device manufacture; wide band gap semiconductors; JFET; MESFET; MOSFET; device comparison; figure-of-merit; material comparison; power device conduction; power levels; semiconductor materials; switching frequency; switching losses; switching power device; wide-bandgap semiconductor; Capacitance; Conducting materials; Dielectric materials; MESFETs; Magneto electrical resistivity imaging technique; Power semiconductor switches; Semiconductor materials; Switching converters; Switching loss; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826533
