• DocumentCode
    977282
  • Title

    TEG in LP-MO CVD Ga0.47In0.53As-InP superlattice

  • Author

    Razeghi, M. ; Poisson, M.A. ; Larivain, J.P. ; de Cremoux, B. ; Duchemin, J.P. ; Voos, M.

  • Author_Institution
    Thomson-CSF, Orsay, France
  • Volume
    18
  • Issue
    8
  • fYear
    1982
  • Firstpage
    339
  • Lastpage
    340
  • Abstract
    We report the first successful growth of Ga0.47In0.53As-InP superlattice by the low-pressure metalorganic chemical vapour deposition technique, and evidence for TEG properties in these structures.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor superlattices; vapour phase epitaxial growth; III-V semiconductors; LP-MO CVD Ga0.47In0.53As-InP superlattice; two-dimensional electron gas properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820231
  • Filename
    4246363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977282