Title :
Modeling of nanoscale gate-all-around MOSFETs
Author :
Jiménez, D. ; Saenz, J.J. ; Iñíguez, B. ; Suñé, J. ; Marsal, L.F. ; Pallarés, J.
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
fDate :
5/1/2004 12:00:00 AM
Abstract :
We present a compact physics-based model for the nanoscale gate-all-around MOSFET working in the ballistic limit. The current through the device is obtained by means of the Landauer approach, being the barrier height the key parameter in the model. The exact solution of the Poisson´s equation is obtained in order to deal with all the operation regions tracing properly the transitions between them.
Keywords :
MOSFET; Poisson equation; nanotechnology; semiconductor device models; Landauer approach; MOSFET modeling; Poisson equation; nanoscale gate-all-around MOSFET; physics-based model; quantum wires; transition tracing; Boundary conditions; CMOS technology; Cathodes; Electrons; MOSFETs; Particle scattering; Poisson equations; Scalability; Silicon; Wire;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826526
