Title :
Impact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks
Author :
Pantisano, L. ; Lucci, L. ; Cartier, E. ; Kerber, A. ; Groeseneken, G. ; Green, M. ; Selmi, L.
Author_Institution :
Interuniversity Microelectron. Center, Leuven, Belgium
fDate :
5/1/2004 12:00:00 AM
Abstract :
Electron and hole trapping were studied in sub-2-nm SiO2/Al2O3/poly-Si gate stacks. It was found that during substrate injection, electron trapping is the dominant mechanism. Conversely, during gate injection both hole and electron trapping can be observed, depending on the applied bias. These hot carrier effects are closely linked to the band structure of SiO2/Al2O3/poly-Si system.
Keywords :
aluminium compounds; band structure; charge injection; electron traps; elemental semiconductors; hole traps; hot carriers; semiconductor-insulator boundaries; silicon; silicon compounds; 2 nm; SiO2-Al2O3-Si; band structure; charge trapping; electron trapping; gate injection; hole trapping; hot carrier effects; poly-Si gate stacks; polysilicon; substrate injection; Annealing; CMOS technology; Charge carrier processes; Dielectric materials; Electron traps; Hot carrier effects; Microelectronics; NIST; Stress; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826534
