Title :
Stable monolithic GaAs FET oscillator
Author :
Tsironis, Christos ; Kermarrec, C. ; Faguet, J. ; Harrop, Peter
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
A monolithic X-band GaAs FET oscillator has been developed. Passive circuit components are lumped capacitors and inductors on semi-insulating GaAs; the chip size is 1.2 × 1.4 mm2. Stabilised with a Ba2Ti9O20 dielectric resonator, the oscillator delivers more than 30 mW output power at 10.8 GHz with a maximum chip efficiency of 20%. The frequency drift is better than 1 × 10¿6/K from ¿20°C to 80°C.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; 10.8 GHz; Ba2Ti9O20 dielectric resonator; III-V semiconductor; inductors; lumped capacitors; monolithic X-band GaAs FET oscillator; passive circuit components;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820236
