Title :
Static, pulsed and frequency-dependent current/voltage characteristics of GaAs FETs
Author :
Tellez, J Rodriguez ; Stothard, B P ; Al-Daas, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
fDate :
6/1/1996 12:00:00 AM
Abstract :
Measurements are performed on a variety of GaAs MESFET devices to show that the observed differences between the static and pulsed current/voltage characteristics do not arise entirely from self-heating effects. The results show that a significant reason for the differences arises from frequency-dispersion effects. The data presented show the relationship between temperature, bias and frequency
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; GaAs MESFET devices; current/voltage characteristics; frequency-dependent I/V characteristics; frequency-dispersion effects; pulsed I/V characteristics; self-heating effects; static I/V characteristics;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19960178
