Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

Author

Gaspari, Valerio ; Fobelets, K. ; Ding, P.W. ; Velazquez-Perez, J.E. ; Olsen, S.H. ; Neill, A. G O´ ; Zhang, J.

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK

Volume

25

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

334

Lastpage

336

Abstract

The dynamic threshold (DT) behavior of strained-Si (s-Si) n-type surface channel MOSFETs has been investigated for operating temperatures ranging from 10 to 300 K. The temperature dependence of the coefficients governing the body effect is presented, and their influence on the performance enhancement due to DT-mode operation is analyzed. The maximum transconductance is higher for the s-Si MOSFET in both operating modes over the whole temperature range. The relative improvement of the maximum transconductance between normal and DT-mode operation is found to be lower for the s-Si MOSFET (30%) compared to the Si control MOSFET (55%) over the whole temperature range. The subthreshold slope for the Si control follows the calculated behavior in both normal and DT-mode, and the subthreshold performance enhancement of the s-Si device due to DT-mode operation is closely approximated by the theoretical value (26%).

Keywords

MOSFET; elemental semiconductors; semiconductor device measurement; silicon; temperature measurement; 10 to 300 K; DT mode; Si; Si control MOSFET; dynamic threshold behavior; maximum transconductance; n-type MOSFET; s-Si MOSFET; submicrometer strained-Si surface channel; subthreshold slope; temperature dependence; temperature range; Germanium silicon alloys; Leakage current; MOSFETs; Performance analysis; Silicon germanium; Silicon on insulator technology; Temperature control; Temperature dependence; Temperature distribution; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.827286

Filename

1295125