• DocumentCode
    977434
  • Title

    GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure

  • Author

    Matsuoka, T. ; Suzuki, Yuya ; Noguchi, Y. ; Nagai, Hiroto

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    9
  • fYear
    1982
  • Firstpage
    359
  • Lastpage
    361
  • Abstract
    GaInAsP/InP DH lasers for the 1.3 ¿m region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; 1.3 micron wavelength; CW operation; GaInAsP-InP DH laser; LPE process; semi-insulating InP substrate; semiconductor laser; terrace structure; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820246
  • Filename
    4246379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977434