Title :
GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure
Author :
Matsuoka, T. ; Suzuki, Yuya ; Noguchi, Y. ; Nagai, Hiroto
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
GaInAsP/InP DH lasers for the 1.3 ¿m region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; 1.3 micron wavelength; CW operation; GaInAsP-InP DH laser; LPE process; semi-insulating InP substrate; semiconductor laser; terrace structure; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820246
