Title :
InGaAsP/InP dual-wavelength BH laser array
Author :
Nagai, H. ; Suzuki, Y. ; Noguchi, Y.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A dual-wavelength BH laser array emitting at 1.26 and 1.55 ¿m has been fabricated. Spacing between the two BH lasers is 30 ¿m, and simultaneous CW operation of the two lasers at room temperature has been achieved. Measured crosstalk was ¿50 dB.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.26 micron wavelength; 1.55 micron wavelength; CW operation; InGaAsP-InP buried heterostructure laser; crosstalk; dual-wavelength BH laser array; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820254
