Title :
Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injection
Author :
Maes, H.E. ; Groeseneken, Guido
Author_Institution :
Katholieke Universiteit Leuven, ESAT Laboratory, Heverlee, Belgium
Abstract :
The charge pumping technique has been adapted for the determination of the spatial distribution of the interface state density in the channel region of short channel MOS or SIMOS transistors. This spatial distribution is shown to be modified by channel hot electron injection and provides information on the location and width of the injection region.
Keywords :
electronic density of states; hot carriers; insulated gate field effect transistors; interface electron states; MOS transistor; SIMOS transistors; channel hot electron injection; charge pumping technique; interface state density; spatial surface state density distribution; stacked gate injection MOS transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820255
