• DocumentCode
    977522
  • Title

    Determination of spatial surface state density distribution in MOS and SIMOS transistors after channel hot electron injection

  • Author

    Maes, H.E. ; Groeseneken, Guido

  • Author_Institution
    Katholieke Universiteit Leuven, ESAT Laboratory, Heverlee, Belgium
  • Volume
    18
  • Issue
    9
  • fYear
    1982
  • Firstpage
    372
  • Lastpage
    374
  • Abstract
    The charge pumping technique has been adapted for the determination of the spatial distribution of the interface state density in the channel region of short channel MOS or SIMOS transistors. This spatial distribution is shown to be modified by channel hot electron injection and provides information on the location and width of the injection region.
  • Keywords
    electronic density of states; hot carriers; insulated gate field effect transistors; interface electron states; MOS transistor; SIMOS transistors; channel hot electron injection; charge pumping technique; interface state density; spatial surface state density distribution; stacked gate injection MOS transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820255
  • Filename
    4246388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977522