Title :
K-band HBT and HEMT monolithic active phase shifters using vector sum method
Author :
Chen, Po-Yu ; Huang, Tian-Wei ; Wang, Huei ; Wang, Yu-Chi ; Chen, Chung-Hsu ; Chao, Pane-Chane
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
5/1/2004 12:00:00 AM
Abstract :
Two monolithic 3-bit active phase shifters using the vector sum method to K-band frequencies are reported in this paper. They are separately implemented using commercial 6-in GaAs HBT and high electron-mobility transistor (HEMT) monolithic-microwave integrated-circuit (MMIC) foundry processes. The MMIC HBT active phase shifter demonstrates an average gain of 8.87 dB and a maximum phase error of 11° at 18 GHz, while the HEMT phase shifter has 3.85-dB average measured gain with 11° maximum phase error at 20 GHz. The 20-GHz operation frequency of this HEMT MMIC is the highest among all the reported active phase shifters. The analysis for gain deviation and phase error of the active phase shifter using the vector sum method due to the individual variable gain amplifiers is also presented. The theoretical analysis can predict the measured minimum root-mean-square phase error 4.7° within 1° accuracy.
Keywords :
III-V semiconductors; MMIC phase shifters; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; vectors; 18 GHz; 20 GHz; 3.85 dB; 8.87 dB; GaAs HBT; HBT; HeMT monolithic; MMIC; active phase shift; high electron-mobility transistor; monolithic-microwave integrated-circuit; root mean square phase error; theoretical analysis; vector sum method; Frequency; Gain; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; K-band; MMICs; MODFETs; Phase measurement; Phase shifters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.827010