Title :
Single-carrier-type dominated impact ionisation in multilayer structures
Author :
Blauvelt, Hank ; Margalit, S. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, USA
Abstract :
A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; photodetectors; GaAs-AlGaAs detector; III-V semiconductor; avalanche photodetectors; avalanche photodiode; carrier multiplication; electron multiplication; impact ionisation; multilayer structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820257
