DocumentCode
977561
Title
Theoretical investigation of excitonic gain in ZnO--MgxZn1-xO strained quantum wells
Author
Abiyasa, A.P. ; Yu, S.F. ; Fan, W.J. ; Lau, S.P.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume
42
Issue
5
fYear
2006
fDate
5/1/2006 12:00:00 AM
Firstpage
455
Lastpage
463
Abstract
Free-excitonic gain of wurtzite ZnO--MgxZn1-xO quantum wells(QWs) is studied theoretically. The valence band structure of ZnO--MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO--MgxZn1-xO QWs are found to be 60/40 and -6.8eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO--MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.
Keywords
II-VI semiconductors; conduction bands; deformation; excitons; magnesium compounds; phonons; semiconductor quantum wells; valence bands; wide band gap semiconductors; zinc compounds; -6.8 eV; 6×6 Hamiltonian; ZnO-MgxZn1-xO; ZnO-MgxZn1-xO quantum wells; biaxial strain; conduction band deformation potential; exciton-phonon interaction; excitonic gain; mole fraction; strained quantum wells; valence band; wurtzite; Capacitive sensors; Charge carrier processes; Effective mass; Glass; Numerical models; Piezoelectric polarization; Quantum mechanics; Quantum wells; Wave functions; Zinc oxide; Excitonic gain; numerical modeling; quantum wells (QWs); zinc oxide;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2006.872318
Filename
1643345
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