Title :
Theoretical investigation of excitonic gain in ZnO--MgxZn1-xO strained quantum wells
Author :
Abiyasa, A.P. ; Yu, S.F. ; Fan, W.J. ; Lau, S.P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
5/1/2006 12:00:00 AM
Abstract :
Free-excitonic gain of wurtzite ZnO--MgxZn1-xO quantum wells(QWs) is studied theoretically. The valence band structure of ZnO--MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO--MgxZn1-xO QWs are found to be 60/40 and -6.8eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO--MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.
Keywords :
II-VI semiconductors; conduction bands; deformation; excitons; magnesium compounds; phonons; semiconductor quantum wells; valence bands; wide band gap semiconductors; zinc compounds; -6.8 eV; 6×6 Hamiltonian; ZnO-MgxZn1-xO; ZnO-MgxZn1-xO quantum wells; biaxial strain; conduction band deformation potential; exciton-phonon interaction; excitonic gain; mole fraction; strained quantum wells; valence band; wurtzite; Capacitive sensors; Charge carrier processes; Effective mass; Glass; Numerical models; Piezoelectric polarization; Quantum mechanics; Quantum wells; Wave functions; Zinc oxide; Excitonic gain; numerical modeling; quantum wells (QWs); zinc oxide;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.872318
