• DocumentCode
    977576
  • Title

    High gain effects for solid-state impact-ionization multipliers

  • Author

    Lee, Hong-Wei ; Beutler, Joshua L. ; Hawkins, Aaron R.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Brigham Young Univ., Provo, UT, USA
  • Volume
    42
  • Issue
    5
  • fYear
    2006
  • fDate
    5/1/2006 12:00:00 AM
  • Firstpage
    471
  • Lastpage
    476
  • Abstract
    We report the demonstration of a current amplification device, built from silicon and based on impact ionization, which can be cascaded to achieve very high gains. Arbitrary current sources including photodiodes can be interfaced with this device. Testing was done by amplifying the output signal from an independent silicon photodiode. Current gains over 600 were measured for initial photocurrents of 10 nA when two amplifying devices were cascaded together. Additionally, the gain saturation phenomenon of the amplifier due to space-charge effects is investigated. The measured gain saturation is observed to match very well with theoretical predictions. We also present guidelines for obtaining high current gain from the cascaded structure while avoiding gain saturation. Because of the low-noise gain mechanism employed, this device is of potential interest to a variety of fields requiring high-sensitivity optical or electronic detection.
  • Keywords
    avalanche photodiodes; electron multipliers; impact ionisation; photoconductivity; semiconductor device noise; silicon; space charge; 10 nA; avalanche photodiode; cascaded structure; current amplification device; current gains; current sources; electron multiplier; gain saturation; high gain effects; high-sensitivity electronic detection; high-sensitivity optical detection; impact-ionization multipliers; low-noise gain mechanism; photocurrents; photodiodes; solid-state multipliers; space-charge effects; Current measurement; Gain measurement; Guidelines; Impact ionization; Optical amplifiers; Photoconductivity; Photodiodes; Silicon; Solid state circuits; Testing; Avalanche photodiode (APD); electron multipliers; impact ionization; space charge;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2006.873150
  • Filename
    1643346