Title :
LPE growth of In0.48Ga0.52As0.01P0.99 lattice-matched to GaAs from an In melt rich in P
Author :
Kawanishi, H. ; Hiraoka, M. ; Yoshioka, K. ; Nishio, K. ; Nakagomi, T. ; Tanaka, S.
Author_Institution :
Kogakuin University, Department of Electronic Engineering, Tokyo, Japan
Abstract :
High-quality quaternary In0.48Ga0.52As0.01P0.99 crystals lattice-matched to GaAs substrates were grown by liquid phase epitaxy from an In melt rich in P. The peak wave-length and spectral width of the photoluminescence were 652.5 nm and 13.4 nm at room temperature, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; In melt; LPE growth; lattice-matched to GaAs substrates; liquid phase epitaxy; peak wave-length; photoluminescence; quaternary In0.48Ga0.52As0.01P 0.99 crystals; semiconductor growth; spectral width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820263
