DocumentCode
977614
Title
LPE growth of In0.48Ga0.52As0.01P0.99 lattice-matched to GaAs from an In melt rich in P
Author
Kawanishi, H. ; Hiraoka, M. ; Yoshioka, K. ; Nishio, K. ; Nakagomi, T. ; Tanaka, S.
Author_Institution
Kogakuin University, Department of Electronic Engineering, Tokyo, Japan
Volume
18
Issue
9
fYear
1982
Firstpage
384
Lastpage
385
Abstract
High-quality quaternary In0.48Ga0.52As0.01P0.99 crystals lattice-matched to GaAs substrates were grown by liquid phase epitaxy from an In melt rich in P. The peak wave-length and spectral width of the photoluminescence were 652.5 nm and 13.4 nm at room temperature, respectively.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; In melt; LPE growth; lattice-matched to GaAs substrates; liquid phase epitaxy; peak wave-length; photoluminescence; quaternary In0.48Ga0.52As0.01P 0.99 crystals; semiconductor growth; spectral width;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820263
Filename
4246396
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