Title :
GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates
Author :
Koyama, Fumio ; Liou, K.-Y. ; Dentai, A.G. ; Raybon, G. ; Burrus, C.A.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
An electroabsorption modulator and an optical amplifier have been monolithically integrated by using nonplanar MOVPE. A bandgap shift of more than 60nm was obtained with atmospheric pressure MOVPE of GaInAs/GaInAsP strained QWs on 10 mu m wide ridges. A chip gain of 9dB and an excitation ratio of 17dB were obtained for the monolithic electroabsorption modulator/amplifier. The integration of an optical amplifier enables the use of a wavelength close to the bandgap of the modulator, resulting in low voltage and low chirp operation.
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical modulation; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 10 micron; 9 dB; GaInAs-GaInAsP; GaInAs/GaInAsP strained QWs; GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier; atmospheric pressure MOVPE; bandgap shift; chip gain; excitation ratio; lateral bandgap control; low chirp operation; low voltage; monolithic integration; nonplanar MOVPE; nonplanar substrates; optical amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931407
