Title :
Oxide-thickness determination in thin-insulator MOS structures
Author :
Riccò, Bruno ; Olivo, Piero ; Nguyen, Thao N. ; Kuan, Tung-Sheng ; Ferriani, Guido
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
A technique to electrically determine the oxide thickness (and, in some cases, the flat-band voltage and surface doping as well) of thin-insulator MOS structures is discussed. This method does not require a model for either the accumulated or inverted semiconductor interface but assumes only that the classical MOS theory holds for zero surface band bending. By means of numerical simulations and comparison with high-resolution measurements obtained with transmission-electron microscopy, the technique is found to be valid well beyond the conditions for which it has been mathematically derived and to be applicable in almost all cases of practical interest
Keywords :
metal-insulator-semiconductor structures; semiconductor technology; silicon compounds; thickness measurement; Al-SiO2-Si capacitor; C-V measurement; MOS capacitors; SiO2 thickness measurement; classical MOS theory; comparison with high-resolution measurements; electrically determined oxide thickness; flat-band voltage; numerical simulations; surface doping; thin-insulator MOS structures; transmission-electron microscopy; zero surface band bending; Capacitance measurement; Capacitance-voltage characteristics; Insulation; MOS capacitors; MOS devices; Numerical simulation; Semiconductor device doping; Semiconductor process modeling; Thickness measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
