Title :
Diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO/sub 4//KTP Green laser with a GaAs wafer
Author :
Yang, Kejian ; Zhao, Shengzhi ; Guiqiu Li ; Ming Li ; Li, Dechun ; Wang, Jing ; An, Jing
Author_Institution :
Sch. of Inf. Sci. & Eng., Shandong Univ., Jinan
fDate :
7/1/2006 12:00:00 AM
Abstract :
A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled c-cut Nd:GdVO4/KTP green laser with a GaAs saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses has been achieved. By using the hyperbolic secant function methods and considering the influences of continuous pump rate and the stimulated radiation lifetime of the active medium, a modified rate equation model for Q-switched and mode-locked lasers was proposed. With this modified model, the theoretical calculations are in good agreement with the experimental results, and the width of the mode-locked green pulse was estimated to be about 300 ps
Keywords :
III-V semiconductors; Q-switching; gadolinium compounds; gallium arsenide; laser cavity resonators; laser mode locking; neodymium; optical harmonic generation; optical modulation; optical pumping; optical saturable absorption; potassium compounds; radiative lifetimes; solid lasers; stimulated emission; 300 ps; GaAs; GaAs saturable absorber; GaAs wafer; GdVO4:Nd; KTP; KTiOPO4; Nd:GdVO4/KTP laser; diode-pumped laser; green laser; hyperbolic secant function methods; intracavity frequency-doubling; mode-locked green pulses; mode-locked laser; modulation depth; passive Q-switching; rate equation model; stimulated radiation lifetime; Diodes; Equations; Frequency; Gallium arsenide; Laser excitation; Laser mode locking; Laser theory; Pulse modulation; Pump lasers; Space vector pulse width modulation; fluctuation mechanism; mode-locking; passively Q-switched;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.876358
