Title :
(AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth
Author :
Tsang, W.T. ; Logan, R.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
The localised nonwetting problem encountered during regrowth by LPE in the fabrication of a strip buried-heterostructure (SBH) laser was solved by using the hybrid process of MBE to grow the uniform four-layer heterostructure and LPE to achieve the melt back and regrowth. As a result of this process, a very significant improvement in the device yield was obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; molecular beam epitaxial growth; semiconductor junction lasers; (AlGa)As strip buried heterostructure lasers; III-V semiconductor; LPE; MBE; hybrid crystal growth; localised nonwetting problem;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820271
