DocumentCode
977720
Title
(AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth
Author
Tsang, W.T. ; Logan, R.A.
Author_Institution
Bell Laboratories, Murray Hill, USA
Volume
18
Issue
10
fYear
1982
Firstpage
397
Lastpage
398
Abstract
The localised nonwetting problem encountered during regrowth by LPE in the fabrication of a strip buried-heterostructure (SBH) laser was solved by using the hybrid process of MBE to grow the uniform four-layer heterostructure and LPE to achieve the melt back and regrowth. As a result of this process, a very significant improvement in the device yield was obtained.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; molecular beam epitaxial growth; semiconductor junction lasers; (AlGa)As strip buried heterostructure lasers; III-V semiconductor; LPE; MBE; hybrid crystal growth; localised nonwetting problem;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820271
Filename
4246405
Link To Document