Title :
Liquid phase epitaxy of a new semiconductor AlGaInSb
Author_Institution :
Hungarian Academy of Sciences, Research Institute for Technical Physics, Budapest, Hungary
Abstract :
A new semiconductor system in the quaternary group, AlxGayIn1¿x¿ySb has been prepared. The growth of bulk materials is very difficult because of the reactivity of Al and the segregation effects, but LPE methods were successfully applied to grow homogeneous and good-quality epitaxial layers onto InSb and GaSb.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium antimonide; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; III-V semiconductor; LPE methods; quaternary group; semiconductor AlGaInSb; semiconductor materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820279
