Title :
New chemical etching solution for InP and GaInAsP gratings
Author :
Saitoh, Takashi ; Mikami, Osamu ; Nakagome, Hideki
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A new chemical etching solution of bromine-water system, which is suitable for transforming the fine resist grating mask pattern onto InP and GaInAsP surfaces, is reported. The Br2:H2O:H3PO4 (or HCl) solution does not dissolve AZ 1350 photoresist and exhibits both moderate etching rate and a pit-free etched surface.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; AZ 1350 photoresist; Br water system; Br2:H2O:H3PO4; GaInAsP gratings; III-V semiconductors; InP gratings; chemical etching solution; fine resist grating mask pattern; pit-free etched surface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820280
