• DocumentCode
    977879
  • Title

    Substrate effects on performance of InP MOSFETs

  • Author

    Woodward, J. ; Brown, G.T. ; Cockayne, B. ; Cameron, D.C.

  • Author_Institution
    Royal Signals & Radar Establishment, Great Malvern, UK
  • Volume
    18
  • Issue
    10
  • fYear
    1982
  • Firstpage
    415
  • Lastpage
    417
  • Abstract
    InP MOSFET devices with a SiO2 dielectric layer have been fabricated on p-type and SI substrates. Surface mobilities in the range 250 to 750 cm2 V¿1 s¿1 have been routinely obtained from all substrates except those from one crystal of Fe-doped SI InP. Defect etching studies have revealed large prismatic dislocation loops in this crystal. A correlation between these observations is proposed.
  • Keywords
    III-V semiconductors; indium compounds; insulated gate field effect transistors; substrates; III-V semiconductors; InP MOSFETS; SiO2 dielectric layer; defect etching; prismatic dislocation loops; substrate effects; surface mobilities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820285
  • Filename
    4246419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977879