Title :
Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD
Author :
Bazylenko, M.V. ; Gross, M. ; Chu, P.L. ; Moss, D.
Author_Institution :
Dept. of Electr. Eng., New South Wales Univ., Kensington, NSW, Australia
fDate :
6/20/1996 12:00:00 AM
Abstract :
It is demonstrated that a novel thin film growth technique, hollow cathode PECVD, previously used to produce low-loss glass waveguides, can also produce intrinsically (no hydrogen loading) very photosensitive (to UV) germanosilicate waveguide material. In addition, the sign of the photosensitivity can be altered by varying the growth conditions
Keywords :
germanium; optical fabrication; optical films; optical planar waveguides; plasma CVD; plasma CVD coatings; silicon compounds; SiO2:Ge; growth conditions; hollow cathode PECVD; photosensitivity; thin film growth technique; waveguide material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960791
