• DocumentCode
    977889
  • Title

    Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD

  • Author

    Bazylenko, M.V. ; Gross, M. ; Chu, P.L. ; Moss, D.

  • Author_Institution
    Dept. of Electr. Eng., New South Wales Univ., Kensington, NSW, Australia
  • Volume
    32
  • Issue
    13
  • fYear
    1996
  • fDate
    6/20/1996 12:00:00 AM
  • Firstpage
    1198
  • Lastpage
    1199
  • Abstract
    It is demonstrated that a novel thin film growth technique, hollow cathode PECVD, previously used to produce low-loss glass waveguides, can also produce intrinsically (no hydrogen loading) very photosensitive (to UV) germanosilicate waveguide material. In addition, the sign of the photosensitivity can be altered by varying the growth conditions
  • Keywords
    germanium; optical fabrication; optical films; optical planar waveguides; plasma CVD; plasma CVD coatings; silicon compounds; SiO2:Ge; growth conditions; hollow cathode PECVD; photosensitivity; thin film growth technique; waveguide material;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960791
  • Filename
    503000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977889