Title :
Velocity/field characteristic measurement using a high-frequency modulated solid-state laser diode
Author :
Evanno, M.H. ; Vaterkowski, J.L.
Author_Institution :
Université des Sciences et Techniques de Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´´Ascq, France
Abstract :
A new experimental method to determine a velocity/field characteristic in semiconductor material is reported. This is a time-of-flight technique based on the phase-shift measurement between the photocurrent created by the output modulated light beam of a laser solid-state diode and the high-frequency signal which modulates the laser. First results concerning hole velocity in silicon and electron velocity in gallium arsenide are presented.
Keywords :
III-V semiconductors; carrier mobility; elemental semiconductors; gallium arsenide; microwave measurement; silicon; GaAs; HF modulated solid-state laser diode; III-V semiconductor; Si; drift velocity; electron holes; electron mobility; elemental semiconductor; microwave measurement; output modulated light beam; phase-shift measurement; photocurrent; time-of-flight technique; velocity/field characteristic measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820286
