DocumentCode
977941
Title
Monolithic integration of In0.2Ga0.8As vertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors
Author
Ortiz, G.G. ; Hains, C.P. ; Cheng, J. ; Hou, H.Q. ; Zolper, J.C.
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume
32
Issue
13
fYear
1996
fDate
6/20/1996 12:00:00 AM
Firstpage
1205
Lastpage
1207
Abstract
Vertical-cavity surface-emitting lasers (VCSELs) have been monolithically integrated with resonance-enhanced photo-detectors (REPDs) using a single epilayer design, to produce a simple array of sources and detectors for optical interconnect applications. The detectors, which contain a three quantum well InGaAs absorption region, achieve quantum efficiencies as high as 85%, and the VCSELs achieved threshold current densities as low as 850 A/cm2 and differential quantum efficiencies as high as 50%
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; photodetectors; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; 50 percent; 85 percent; In0.2Ga0.8As; differential quantum efficiencies; optical interconnect applications; quantum efficiencies; resonance-enhanced quantum well photodetectors; single epilayer design; threshold current densities; vertical-cavity surface-emitting lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960782
Filename
503005
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