Title :
10 Gbit/s DFB laser/monitor PICs for low cost high speed laser modules
Author :
Dutting, K. ; Idler, W.
Author_Institution :
Optoelectron. Div., Alcatel SEL AG, Stuttgart, Germany
Abstract :
Direct modulation with 10 Gbit/s and 1:10 extinction ratio with low chirp of 0.3nm is achieved with a 1.5 mu m InGaAsP-InP MQW DFB laser/monitor diode photonic integrated circuit (PIC). Uniform laser mirrors and monitor diode facets are reactive ion etched using a CH4/H2/CO2 gas mixture.
Keywords :
III-V semiconductors; digital communication systems; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; optical communication equipment; optical modulation; photodiodes; semiconductor lasers; 1.5 micron; 10 Gbit/s; CH 4/H 2/CO 2 gas mixture; InGaAsP-InP; InGaAsP/InP laser/monitor diode; MQW DFB laser; OEIC; direct modulation; high speed laser modules; low cost modules; monitor diode facets; photonic integrated circuit; reactive ion etch; uniform laser mirrors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931434
