Title :
HfLaON n-MOSFETs Using a Low Work Function HfSix Gate
Author :
Cheng, C.F. ; Wu, C.H. ; Su, N.C. ; Wang, S.J. ; McAlister, S.P. ; Chin, Albert
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
Abstract :
At a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm2/(Vldrs). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-degC rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines.
Keywords :
MOSFET; VLSI; electron mobility; hafnium compounds; high-k dielectric thin films; ion implantation; lanthanum compounds; rapid thermal annealing; silicon compounds; work function; HfLaON n-MOSFETs; HfSix-Hf0.7La0.3ON; electron mobility; electron volt energy 4.33 eV; equivalent oxide thickness; low work function HfSix gate; rapid thermal annealing; size 1.2 nm; standard ion implantation; temperature 1000 degC; very large scale integration fabrication lines; voltage 0.18 V; Amorphous materials; Capacitors; Dielectrics; Electron mobility; Hafnium; Ion implantation; MOSFET circuits; Senior members; Threshold voltage; Very large scale integration; HfLaON; HfSi; n-MOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.909843
