• DocumentCode
    977969
  • Title

    Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode

  • Author

    Cheng, C.H. ; Pan, H.C. ; Yang, H.J. ; Hsiao, C.N. ; Chou, C.P. ; McAlister, S.P. ; Chin, Albert

  • Author_Institution
    Nat. Chiao-Tung Univ., Hsinchu
  • Volume
    28
  • Issue
    12
  • fYear
    2007
  • Firstpage
    1095
  • Lastpage
    1097
  • Abstract
    We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10-7 A/cm2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.
  • Keywords
    MIM devices; capacitors; high-k dielectric thin films; iridium; leakage currents; tantalum compounds; titanium compounds; work function; TaN-Ir-TiLaO-TaN - System; high-density MIM capacitors; high-k dielectric thin films; high-temperature leakage; low leakage current; metal-insulator-metal capacitors; temperature 125 C; work function electrode; Capacitance; Current measurement; Dielectric devices; Electrodes; Leakage current; MIM capacitors; MIM devices; Plasma measurements; Surface resistance; Temperature; High-$kappa$; Ir; TiLaO; metal–insulator–metal (MIM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.909612
  • Filename
    4383533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977969