Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

Author

Endo, Kazuhiko ; Ishikawa, Yuki ; Liu, Yongxum ; Masahara, Meishoku ; Matsukawa, Takashi ; O´Uchi, Shin-Ichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Tsukada, Junichi ; Suzuki, Eiichi

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba

Volume

28

Issue

12

fYear

2007

Firstpage

1123

Lastpage

1125

Abstract

We investigated channel doping in fin-type double-gate (DG) MOSFETs. We demonstrated through experiments that the threshold voltage was more sensitive to the dopants in the accumulation mode than in the inversion mode. We also found that significant deviation in the threshold voltage from the expected value arose in ultrathin fin-type DG MOSFETs. We attributed this phenomenon to the unexpected dopant loss from the ultrathin channels due to segregation. This finding means that careful doping adjustments must be made in ultrathin-channel devices.

Keywords

MOSFET; segregation; semiconductor device testing; semiconductor doping; FinFET; accumulation mode; channel doping effects; current-voltage characteristics; dopant loss; double-gate MOSFET; inversion mode; threshold voltage; ultrathin fin-type MOSFET; CMOS technology; Doping; Etching; Fabrication; FinFETs; Ion implantation; MOS devices; MOSFETs; Nanoscale devices; Threshold voltage; Channel doping; dopant loss; double-gate (DG) MOSFET; threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.909841

Filename

4383537