Ga0.51In0.49P channel MESFET

High bandgap materials are extremely important for high temperature and high power electronic applications. GaInP is an attractive large bandgap material because it can be grown lattice matched to GaAs. The authors report the first GaInP channel MESFET. The material was grown by a non-hydride MOCVD technique using TBP as the phosphorus source. A 1 mu m gate length device had a drain current density of 300mA/mm, an extrinsic transconductance of 70mS/mm, a gate-drain breakdown voltage of 17V, with an f_T and f_max of 10 and 25GHz, respectively.