DocumentCode
978038
Title
Enhancement-Mode GaAs MOSFETs With an In0.3 Ga0.7As Channel, a Mobility of Over 5000 cm2/V ·s, and Transconductance of Over 475 μS/μm
Author
Hill, Richard J W ; Moran, David A J ; Li, Xu ; Zhou, Haiping ; Macintyre, Douglas ; Thoms, Stephen ; Asenov, Asen ; Zurcher, Peter ; Rajagopalan, Karthik ; Abrokwah, Jonathan ; Droopad, Ravi ; Passlack, Matthias ; Thayne, Iain G.
Author_Institution
Univ. of Glasgow, Glasgow
Volume
28
Issue
12
fYear
2007
Firstpage
1080
Lastpage
1082
Abstract
We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-k (k = 20) gate stack, a Pt gate, and a delta-doped InGaAs/AlGaAs/GaAs hetero-structure. Typical 1-mum gate length device figures of merit are given as follows: saturation drive current, Id,sat = 407 muA/mum; threshold voltage, Vt = +0.26 V; maximum extrinsic transconductance, gm = 477 muS/mum (the highest reported to date for a III-V MOSFET); gate leakage current, Ig = 30 pA; subthreshold swing, S = 102 mV/dec; on resistance, Ron = 1920 Omega-mum; Ion/Ioff ratio = 6.3 x 104; and output conductance, gd = 11 mS/mm. A peak electron mobility of 5230 cm2/V. s was extracted from low-drain-bias measurements of 20 mum long-channel devices, which, to the authors´ best knowledge, is the highest mobility extracted from any e-mode MOSFET. These transport and device data are highly encouraging for future high-performance n-channel complementary metal-oxide-semiconductor solutions based on III-V MOSFETs.
Keywords
III-V semiconductors; MOSFET; aluminium compounds; electric admittance; electron mobility; gallium arsenide; gallium compounds; indium compounds; leakage currents; semiconductor doping; semiconductor heterojunctions; GaGdO - System; InGaAs-AlGaAs-GaAs - Interface; current 30 pA; delta-doped hetero-structure; electron mobility; enhancement-mode MOSFET; gate leakage current; gate length device; gate stack; high-mobility channels; high-performance n-channel complementary metal-oxide-semiconductor; long-channel devices; low-drain-bias measurements; metal-gate high-k-dielectric MOSFET; saturation drive current; subthreshold swing; transconductance; Data mining; Gallium arsenide; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; Indium gallium arsenide; Leakage current; MOSFETs; Threshold voltage; Transconductance; Enhancement mode (e-mode); GaGdO; III–V MOSFET; high $kappa$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.910009
Filename
4383539
Link To Document