Title :
Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation
Author :
Kambayashi, Hiroshi ; Niiyama, Yuki ; Ootomo, Shinya ; Nomura, Takehiko ; Iwami, Masayuki ; Satoh, Yoshihiro ; Kato, Sadahiro ; Yoshida, Seikoh
Author_Institution :
Furukawa Electr. Co., Ltd., Yokohama
Abstract :
We have demonstrated n-channel gallium nitride (GaN) MOSFETs using a selective area growth (SAG) technique and ion implantation on a silicon substrate. Both MOSFETs realized good normally off operations. The MOSFET using the SAG technique showed a large drain current of 112 mA/mm, a lower leakage current, and a high field mobility of 113 cm2/V . s, which is, to our knowledge, the best for a GaN MOSFET on a silicon substrate.
Keywords :
III-V semiconductors; MOSFET; gallium compounds; ion implantation; leakage currents; silicon; substrates; SAG technique; Si; drain current; high field mobility; ion implantation; leakage current; normally off n-channel GaN MOSFET; selective area growth; silicon substrate; Aluminum gallium nitride; Gallium nitride; HEMTs; III-V semiconductor materials; Ion implantation; Leakage current; MODFETs; MOSFETs; Silicon; Substrates; Gallium nitride (GaN); MOSFETs; normally off; silicon substrate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.909978
