High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

Author

Lew, K.L. ; Yoon, S.F. ; Wang, H. ; Wicaksono, S. ; Gupta, J.A. ; McAlister, S.P.

Author_Institution

Nanyang Technol. Univ., Singapore

Volume

28

Issue

12

fYear

2007

Firstpage

1083

Lastpage

1085

Abstract

AlGaAs/GaAsNSb heterojunction bipolar transistors (HBTs) with low turn-on voltage have been fabricated. The turn-on voltage of the device fabricated from an as-grown sample is ~180 mV lower than that of a conventional AlGaAs/GaAs HBT. The effect of rapid thermal annealing on device performance is an increase in the gain from ~8.5 to ~20. However, the knee voltage of the annealed sample (~3 V), as well as the turn-on voltage, is also higher compared with that of the as-grown sample (~1.5 V).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; rapid thermal annealing; semiconductor growth; AlGaAs/GaAsNSb/GaAs heterojunction bipolar transistors; HBT; III-V semiconductors; molecular beam epitaxy; rapid thermal annealing; turn-on voltage; FETs; Gallium arsenide; Heterojunction bipolar transistors; Knee; Low voltage; Material properties; Molecular beam epitaxial growth; Performance gain; Photonic band gap; Rapid thermal annealing; GaAsNSb; heterojunction bipolar transistor (HBT); turn-on voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.910000

Filename

4383544