Title :
Temperature dependence of threshold current of GaAs quantum well lasers
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
The radiative recombination rate in a quantum well structure is calculated using a constant density of states and the k-selection rule. This calculation shows that the threshold current of a GaAs quantum well laser has low temperature sensitivity (T0 ¿ 330 K for T > 300 K).
Keywords :
III-V semiconductors; gallium arsenide; semiconductor junction lasers; GaAs quantum well lasers; constant density of states; k-selection rule; radiative recombination rate; semiconductor laser; temperature dependence; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820307
