Title :
A Constant-Mobility Method to Enable MOSFET Series-Resistance Extraction
Author :
Lin, Da-Wen ; Cheng, Ming-Lung ; Wang, Shyh-Wei ; Wu, Chung-Cheng ; Chen, Ming-Jer
Author_Institution :
Semicond. Manuf. Co., Hsinchu
Abstract :
A new method of extracting the MOSFET series resistance is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier mobility remains constant for high vertical electric fields. It is this unique property which makes the proposed method suitable for short-channel devices.
Keywords :
MOSFET; carrier mobility; semiconductor device measurement; semiconductor device models; MOSFET series-resistance extraction; channel carrier mobility; constant-mobility method; dc measurements; effective channel length; gate-oxide thickness; physical gate length; short-channel devices; vertical electric fields; Channel bank filters; Circuit testing; Degradation; Electric resistance; Electrical resistance measurement; Equivalent circuits; MOSFET circuits; Semiconductor device manufacture; Silicon; Threshold voltage; MOSFET; Mobility; series resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.909850
